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Condition: New Location: Villa Park, United States
Type of Transistor: MOSFET. Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm. Drain-Source Capacitance (Cd): 410 pF.
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Condition: New – Open box Location: Wilkes Barre, United States
PICTURES ARE FOR REFERENCE ONLY YOU WILL NOT RECEIVE ONE WITH THE TOP REMOVED THE ONE YOU WILL RECEIVE WILL HAVE THE TOP IN PLACE THESE PICTURED ARE FOR REFERENCE ONLY. THE FIRST THREE PICTURES ARE FOR REFERENCE ONLY YOU WILL NOT RECEIVE ONE WITH THE TOP OFF.
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Condition: New Location: Villa Park, United States
VDSS = 200V. Ease of Paralleling. higher power levels preclude the use of TO-220 devices. The TO-247 is similar. Advanced Process Technology. Fast Switching.
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Condition: New Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 150 W. Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm. Drain-Source Capacitance (Cd): 1300 pF.
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Condition: New Location: , China
Italy and other countries.
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Condition: New Location: Saint Helens, United States
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Condition: New Location: Brooklyn, United States
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Condition: New Location: Forest Grove, United States
60V 12A 180-mOhm. Power MOSFET Transistor. TO-252 SMD. NOT included in the sale.
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Condition: New Location: Villa Park, United States
VDSS = 200V. Ease of Paralleling. higher power levels preclude the use of TO-220 devices. The TO-247 is similar. Advanced Process Technology. Fast Switching.
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Condition: New Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 520 W. Maximum Drain-Source On-State Resistance (Rds): 0.0175 Ohm.
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Condition: New Location: , HK
Part number:IRFZ24N. 【10PCS】 IRFZ24N. MOSFET N-CH 55V 17A TO220AB. N-Channel 55 V 17A (Tc) 45W (Tc) Through Hole TO-220AB.
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Condition: New Location: Bordentown, United States
RFP9140N + IRFP140N By INTERNATIONAL RECTIFIER. New and Original IR (International Rectifier). 1 Pair: Power N-Mosfet TO-247.
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Condition: New Location: , China
IRF3205 HEXFET Power MOSFET 55V 110A TO-220 IR. Manufacturer P/N: IRF3205. We are happy to serve you.
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Condition: New Location: Cranbury, United States
Model: IRF530N.
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Condition: New Location: Cranbury, United States
Manufacturer P/N: AO3400. Qty: 100pcs.
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Condition: New Location: Clinton, United States
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Condition: New Location: New York, United States
Model: IRF540N. 100% Brang New.
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Condition: New Location: Bordentown, United States
20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 200 W. Maximum Drain Current 'Id': 110 A. Maximum Junction Temperature (Tj): 175 °C.
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Condition: New Location: , United States
IRF730 MOSFET N-Channel 5.5A 400V. FREE Trial!
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Condition: New Location: East Brunswick, United States
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Condition: New Location: , HK
Part number:IRFZ34N. 【10PCS】 IRFZ34N. MOSFET N-CH 55V 29A TO220AB. N-Channel 55 V 29A (Tc) 68W (Tc) Through Hole TO-220AB.
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Condition: New Location: Mission Viejo, United States
TK10A60D TOSHIBA N-Ch MOSFET 600V 10A 750mOhm 45W TO-220SIS. Since Sofitrek is not an authorized distributor, the original manufacturer's warranties are explicitly not applicable to the products sold.
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Condition: New Location: , China
For example, as the price, we should write on the waybill invoice, or how to describe the goods, and so on.
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Condition: New Location: , HK
Part number:IRFZ44N. 【10PCS】 IRFZ44N. MOSFET N-CH 55V 49A TO220AB. N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB.
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Condition: New Location: , China
For example, as the price, we should write on the waybill invoice, or how to describe the goods, and so on.
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Condition: New Location: Villa Park, United States
Type of Transistor: MOSFET. device design that HEXFET Power MOSFETs are well. applications where higher power levels preclude the use of. Maximum Power Dissipation (Pd): 300 W. - Advanced Process Technology.
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Condition: New Location: Duluth, United States
IRF740 IRF9540 IRFP250. More Mosfet parts are available. What is Mosfet?. The wider the channel, the better the device conducts. depletion mode. There are two ways in which a MOSFET can function. The first is known as.
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Condition: New – Open box Location: Fort Collins, United States
Through Hole. 5V @ 250µA. Mounting Type. 150°C (TJ). 290 mOhm @ 10A, 10V. Rds On (Max) @ Id, Vgs. Power Dissipation (Max). 1500pF @ 25V.
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Condition: New Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 160 W. Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm. Drain-Source Capacitance (Cd): 1900 pF.
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Condition: New Location: , China
20pcs IRF530N HEXFET TO-220 IR. Manufacturer P/N: IRF530N. Qty: 20pcs. We are happy to serve you.
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Condition: New Location: Addison, United States
5 x IRF540N TO-220 IRF540 N-CHANNEL POWER MOSFETS. Transistor Type:MOSFET. Transistor Polarity:N Channel. Manufacturer: IR. Manufacturer Part No: IRF540NPBF. Continuous Drain Current, Id:33A.
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Condition: New Location: Cheswick, United States
5x Power Mosfet.
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Condition: New Location: , United States
5 x IRF830 MOSFET N-Channel 4.5A 500V.
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Condition: New Location: , China
We located in the biggest electronic market in ShenZhen,China.We specialize in electronic components more than 10 years,such as ICs,Transistors,Diodes,Resistors,Capacitors and so on.
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Condition: New Location: Saint Helens, United States
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Condition: Used Location: San Antonio, United States
Parts labeled as "pulled" have been previously installed and are made by the original manufacturer.
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Condition: New Location: , HK
Part number:IRF520N. 【10PCS】 IRF520N. MOSFET N-CH 100V 9.7A TO220AB.
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Condition: New Location: Clayton, United States
If there is a part that is not listed, for example- faceplate, knob etc. We can not list all parts available. If there is a part that you need that is not listed, for example, faceplate, CD or DVD Deck, knob, etc.
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Condition: New Location: Bordentown, United States
20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor. Type of Transistor: MOSFET. Maximum Drain Current 'Id': 110 A. Maximum Power Dissipation (Pd): 200 W. Maximum Junction Temperature (Tj): 175 °C.
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Condition: New Location: Salt Lake City, United States
Genuine Vishay IRFP9240 12A 200V P-Chan MOSFET 2x pcs.
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Condition: New Location: Saint Helens, United States
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Condition: New Location: Bordentown, United States
40 x IRF3205 MOSFET N-CHANNEL Power Transistor. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 200 W. Advanced Process Technology. Maximum Junction Temperature (Tj): 175 °C. Maximum Drain Current 'Id': 110 A.
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Condition: New Location: Addison, United States
10 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 200 W. Advanced Process Technology. Maximum Junction Temperature (Tj): 175 °C. Maximum Drain Current 'Id': 110 A.
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Condition: New Location: Cleveland, United States
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Condition: New Location: Bellflower, United States
For sale are 5pcs power Mosfets N- cahnnel 9.7 amp 100 volts used in power inverter circuits and many other applications. .. Fast free shipping from southern California
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Condition: New Location: Bellflower, United States
For sale are 5 pcs P- channel Mosfets IFR9540N 23 amps 100v... Fast free shipping from southern California
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Condition: New Location: Duluth, United States
More Mosfet parts are available. What is Mosfet?. The wider the channel, the better the device conducts. depletion mode. There are two ways in which a MOSFET can function. The first is known as. 1 reset button & 1 general use button.
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Condition: New Location: , HK
Part number:IRF9Z24N. 【10PCS】 IRF9Z24N. MOSFET P-CH 55V 12A TO220AB. P-Channel 55 V 12A (Tc) 45W (Tc) Through Hole TO-220AB.
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Condition: New Location: Lakeside, United States
Rds .052 Ohm @ Vgs=10V
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Condition: New Location: , China
Elehouse2011 will make sure give you 100% satisfactory answer. Choose elehouse2011 is you right choice.
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Condition: New – Open box Location: Rancho Cucamonga, United States
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Condition: New Location: Clinton, United States
Transistor Polarity:??.
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Condition: New Location: Saint Helens, United States
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Condition: New Location: Central Square, United States
N-CHANNEL MOSFET. QTY 5 INTERNATIONAL RECTIFIER.
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Condition: New Location: , United States
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Condition: New Location: San Jose, United States
5Pcs MOSFET N-CH 500V 24A 2SK2837 K2837 Toshiba DC−DC Converter.
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Condition: New Location: , HK
Part number:IRF630N. 【10PCS】 IRF630N. MOSFET N-CH 200V 9.3A TO220AB.
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Condition: New Location: Los Angeles, United States
Increased ruggedness. Silicon optimized for applications switching below <100kHz. Planar cell structure for wide SOA. High current capability. thJCmax 3.1 K/W. DS (on) (@10V)max 200 mΩ. G (typ @10V) 16.7 nC.
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Condition: New Location: Bordentown, United States
LOT OF 10: POWER MOSFET TRANSISTORS. Advanced Process Technology. You are not 100% satisfied with an item you received?. Whatever the reason is, you won't be stuck with an item you cannot use or you do not want.
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Condition: New – Open box Location: Chillicothe, United States
INSERT TITLE. We will take care of you! We are not an authorized dealer of this product. This product has no manufacturers warranty.
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