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$
5.63
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Condition: New
Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 140 W. Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm.
$
12.52
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Condition: New
Location: Cranbury, United States
Lot of 10 FQP30N06L FQP30N06 60V N-Channel MOSFET TO-220 New. Qty: 10pcs. Peak Diode Recovery dv/dt 7.0 V/ns. IAR Avalanche Current 30 A. IDM Drain Current - Pulsed 120 A. ID Drain Current - Continuous (TC = 25°C) 30 A - Continuous (TC = 100°C) 21.3 A.
$
8.63
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Condition: New
Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 83 W.
$
14.63
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Condition: New
Location: Addison, United States
Type of Transistor: MOSFET. Maximum Drain Current 'Id': 65 A. Maximum Power Dissipation (Pd): 190 W.
$
11.99
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Condition: New
Location: Maiden, United States
IRF520PBF Mosfet Power Transistors. "No Slow boat from China!". Check all components carefully! Just replacing is NOT always a fix. You might find these elsewhere for. Technical ability is required to install.
$
0.73
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Condition: New
Location: , China
$
9.40
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Condition: New
Location: Villa Park, United States
20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 200 W. Advanced Process Technology. Maximum Junction Temperature (Tj): 175 °C. Maximum Drain Current 'Id': 110 A.
$
5.89
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Condition: New
Location: Castle Rock, United States
MOSFET - IRF3205 (110A 55V - Logic Level Gate) International Rectifier. 1/5/10/25/50/100 x MOSFET - IRF3205. MOSFET - IRF3205. Switch power on\off to devices up to 55V directly. Transistor Polarity. Power MOSFET.
$
2.61
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Condition: New
Location: , HK
IRFZ46N Power MOSFET TO-220.
$
8.63
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Condition: New
Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 125 W. Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm. Drain-Source Capacitance (Cd): 1200 pF.
$
2.99
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Condition: New
Location: San Francisco, United States
$
12.50
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Condition: New
Location: , China
$
5.82
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Condition: New
Location: Castle Rock, United States
Fairchild IFR650B 28A, 200V MOSFET. 1|5|10|25|50|100 x Fairchild IFR650B 28A, 200V MOSFET(s). 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V. Fast switching. What You Get. Upon the closing of an unpaid claim, the item will be relisted for sale and the existing sale will be cancelled.
$
8.45
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Condition: New
Location: Villa Park, United States
Type of Transistor: MOSFET. Maximum Drain Current 'Id': 65 A. Maximum Power Dissipation (Pd): 190 W.
$
3.99
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Condition: New
Location: Katy, United States
For: Electronic DIY Project.
$
10.63
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Condition: New
Location: Addison, United States
Manufacturer P/N: IRF1407. 10pcs IRF1407 IRF 1407 Power MOSFET TO-220AB "IR" N CHANNEL. Vdss is 75V and continuous drain current is 130A @ 25C. Type of Transistor: MOSFET. N channel Power MOSFET. Maximum Power Dissipation (Pd): 330 W.
$
6.38
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Condition: New
Location: , China
Product information.
$
15.73
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Condition: New
Location: San Jose, United States
5Pcs MMF60R190PTH MMF60R190P 60R190P Power MOSFET TO-220.
$
2.99
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$4.45 Shipping
Condition: New
Location: Clearwater, United States
SUPERTEX PART # TP0602N3. TO92-3 STRAIGHT LEAD 20V MOSFET TRANSISTOR. If we send you the wrong item, obviously we will correct the situation. For tools, any warranty claims should be directed to the original manufacturer only.
$
1.11
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Condition: New
Location: , HK
$
12.95
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$2.75 Shipping
Condition: New
Location: San Diego, United States
While each MOSFET can handle 37A, the board and connectors are only rated for 15A. digitalWrite(3, HIGH); // Turn on the MOSFET. digitalWrite(3, LOW); // Turn off the MOSFET. // Connect pin D3 of Arduino to pin 1 on the breakout board.
$
13.24
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Condition: New
Location: Cranbury, United States
Lot of 10 MOSFET Transistor TO-220 IRF1404 IRF1404PBF New. Manufacturer P/N: IRF1404. Automotive Qualified(Q101). Fast Switching,Fully Avalanche Rated.
$
3.29
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Condition: New
Location: , China
$
12.63
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Condition: New
Location: Addison, United States
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness. Type of Transistor: MOSFET. Enhanced body diode dV/dt and dI/dt Capability. High Speed Power Switching. Maximum Power Dissipation (Pd): 370 W.
$
2.52
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$4.65 Shipping
Condition: New – Open box
Location: Windber, United States
Up for sale are Harris MOSFETs P/N: IRF9530. This Buy It Now is for 1 MOSFET. Power MOSFET Transistor. 75W Dissipation Max. All components are sold as-is and without warranty. For mission critical applications, components should be tested at an accredited test house to verify condition and authenticity.
$
9.00
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Condition: New
Location: Silverton, United States
Silverton, Oregon. Elcom Components.
$
4.99
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Condition: New
Location: , China
Power MOSFET. 10 PCS a lot.
$
5.95
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Condition: New
Location: Saint Helens, United States
$
10.95
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Condition: Used
Location: Miami, United States
Parts labeled as "pulls" or "pulled" have been previously installed and are made by the original manufacturer. Let us fix the problem for you. We will do our best to get back to you as soon as possible.
$
10.95
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Condition: New
Location: Miami, United States
Parts labeled as "pulls" or "pulled" have been previously installed and are made by the original manufacturer. Let us fix the problem for you. We will do our best to get back to you as soon as possible.
$
14.63
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Condition: New
Location: Addison, United States
VDSS = 500V. Improved Gate, Avalanche and dynamic dv/dt Ruggedness. Ease of Paralleling. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
$
8.63
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Condition: New
Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 170 W. Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm.
$
4.99
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Condition: New
Location: Duluth, United States
IRF740 IRF9540 IRFP250. More Mosfet parts are available. What is Mosfet?. The wider the channel, the better the device conducts. depletion mode. There are two ways in which a MOSFET can function. The first is known as.
$
3.49
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$2.99 Shipping
Condition: New
Location: , China
Transistor Type:N-Channel MOSFET.
$
12.63
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Condition: New
Location: Addison, United States
VDSS = 200V. Ease of Paralleling. higher power levels preclude the use of TO-220 devices. The TO-247 is similar. Advanced Process Technology.
$
14.40
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Condition: New
Location: San Jose, United States
$
3.49
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Condition: New
Location: , China
Product Information.
$
4.99
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Condition: New
Location: Edinburg, United States
Current - Continuous Drain (Id) @ 25°C110A (Tc). FET FeatureLogic Level Gate. Power - Max140W. NEW & ORIGINAL . Vgs(th) (Max) @ Id700mV @ 250µA.
$
10.95
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Condition: Used
Location: Miami, United States
Parts labeled as "pulls" or "pulled" have been previously installed and are made by the original manufacturer. Let us fix the problem for you. We will do our best to get back to you as soon as possible.
$
20.00
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Condition: New
Location: Miami, United States
Power Supplies. Let us fix the problem for you. We will do our best to get back to you as soon as possible. - Parts labeled as "pulls" or "pulled" have been previously installed and are made by the original manufacturer.
$
1.79
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Condition: New
Location: Adairsville, United States
This item is for one new genuine Vishay IRF520 MOSFET transistor. Don't be fooled with under-performing fake look-a-likes! These are N-Channel, 100 volt, 9.2 amp, TO220AB, power dissipation 60 watts maximum.
$
15.00
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Condition: New – Open box
Location: Portland, United States
You are buying one lot of five pieces of NEC MOSFET NE650R479A.
$
3.29
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$4.50 Shipping
Condition: New
Location: , China
$
4.75
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Condition: New
Location: Saint Helens, United States
$
7.95
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Condition: New
Location: Stanton, United States
LOT 31369 IC71B.
$
7.45
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Condition: New
Location: Saint Helens, United States
$
7.99
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Condition: New
Location: San Francisco, United States
$
3.32
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Condition: New
Location: , China
$
8.63
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Condition: New
Location: Addison, United States
10 x IRF9540 IRF9540N P-Channel Power MOSFET 23A 100V TO-220. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 150 W. ruggedized device design that HEXFET Power. - Advanced Process Technology.
$
15.97
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Condition: New
Location: , China
Manufacturer P/N: IRF3205. Maximum Vdss: 55V. N-Channel Power mosfets.
$
0.99
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Condition: New
Location: , China
$
8.50
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Condition: New
Location: Los Angeles, United States
Technology Trench Mosfet. Base Part Status Active. Qual Level Industrial. Power Dissipation @ TC = 25C (W) 170. ID @ TC = 100C (A) 78. TJ Max 175. Qgd Typ (nC) 30.0. 1k Budgetary Pricing 0.969.
$
0.99
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Condition: New
Location: , China
Brand Unbranded MPN IRFZ44N Model IRFZ44N UPC Does not apply.
$
5.63
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Condition: New
Location: Addison, United States
10 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 200 W. Advanced Process Technology. Maximum Junction Temperature (Tj): 175 °C. Maximum Drain Current 'Id': 110 A.
$
13.95
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Condition: New
Location: Bordentown, United States
IRF644 By VISHAY. TO-220, Power MOSFET(Vdss=250V, Rds(on)=0.28ohm. ).
$
13.79
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Condition: New
Location: Cranbury, United States
Manufacturer P/N: IRFZ44N. Qty: 20pcs.
$
10.79
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Condition: New
Location: Pelham, United States
Type of Transistor: MOSFET. Lot of (10PCS). Maximum Power Dissipation (Pd): 380 W. Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm.
$
23.99
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Condition: New
Location: , China
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A⑥). 50 PCS a lot.
$
33.00
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Condition: New
Location: , China
:RD100HHF1. RD100HHF1 is a MOS FET type transistor specifically. Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz. Maker:MITSUBISHI. designed for HF High power amplifiers applications. High power and High Gain.
$
12.63
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Condition: New
Location: Addison, United States
RDS (on) (@10V) max: 4.5 m?. VGS max: 20.0 V. VGS(th) min / max: 3.0 V / 2.0 V / 4.0 V. VDS max: 75.0 V. Tj max: 175.0 °C. Special Features: Wide SOA.
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