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Condition: New Location: Villa Park, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 380 W. Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm.
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Condition: New Location: , China
80W, 175MHz, 28V.
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Condition: New Location: Villa Park, United States
20 x IRFZ44 N-Channel HEXFET Power MOSFET 49A 55V. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 94 W. Maximum Drain-Source On-State Resistance (Rds): 0.0175 Ohm. Drain-Source Capacitance (Cd): 360 pF.
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Condition: New Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 140 W. Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm.
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Condition: New Location: Kansas City, United States
30 pcs Sockets. Includes BJT, Mosfets, JFET, Darlington, Germanium, NPN and PNP Transistors BJT: 2n2222,2n2907,S9013,S9012,C945,A733,SS8050,SS8550,BC337,BC327,BC547,BC557,2n3904,2n3906,2n5551,2n5401,S9014,S9015,C1815,A1015,S9015,2n5088,2n5087,2n5089,BC548,BC558,BC550,BC560,2n4401,2n4403.
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Condition: New Location: Denver, United States
Manufacturer Bridgold. 10pcs IRFZ24N. We do not accept P.O. Boxes. New Arrivals. Advanced Process Technology.
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Condition: New – Open box Location: Wilton, United States
Vishay Siliconix. Manufacturer Vishay Siliconix. Product Data Sheet Data Sheet. Specifications See Product Data Sheet. Power MOSFET's.
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Condition: Used Location: Northbrook, United States
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Condition: New Location: Saint Helens, United States
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Condition: New Location: Little Falls, United States
A lot of 10, 25, 50 BS170 MOSFET Transistor 500mA 60 Volts N-Channel FET TO92
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Condition: New Location: El Monte, United States
We will not take back components were apparently soldered to pc board. but must in original condition as we send out.
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Condition: New Location: Huntington Beach, United States
Part: 3SK74L. Bin Loc: 40. Obsolete Procured in the U.S.A. Part marking: 3SK74 L9Y.
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Condition: New Location: Cleveland, United States
5pcs IRFP064N IRFP064NPBF Power MOSFET 55V 110A IR TO-247 Transistor IRFP064
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Condition: New Location: 福田区, China
： IXRFD630. The IXRFD630 is a CMOS highspeed. pulse widths. The IXRFD630 can source and. IXRFD630 unmatched in performance and value. Maker ：IXYS. • RF MOSFET Driver. • Class D and E RF Generators.
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Condition: New Location: Addison, United States
Manufacturer P/N: IRF1407. 10pcs IRF1407 IRF 1407 Power MOSFET TO-220AB "IR" N CHANNEL. Vdss is 75V and continuous drain current is 130A @ 25C. Type of Transistor: MOSFET. N channel Power MOSFET. Maximum Power Dissipation (Pd): 330 W.
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Condition: New Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 280 W. Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm.
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Condition: New Location: Cranbury, United States
N Channel Power MOSFET.
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Condition: New Location: Villa Park, United States
Type of Transistor: MOSFET. Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm. Drain-Source Capacitance (Cd): 410 pF.
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Condition: New Location: Sioux Falls, United States
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Condition: New Location: Saint Louis, United States
2N7002K N-Channel MOSFET. This is a versatile, inexpensive MOSFET that can be used in many applications. The 2N7002 "K" is a modernized version of the older 2N7002. The updated version has lower On-State Resistance, handles more current and has built in Zener diodes for ESD protection.
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Condition: New Location: , China
2N60 power, stable characteristics, high power, easy to install, make products, necessary components for maintenance. 10 Pcs MOSFET Field-effect. Made from silicon material, Good electrical conductivity.
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Condition: New Location: Cranbury, United States
Product Category: MOSFET. Type: HEXFET Power MOSFET. Qty: 10pcs. Number of Channels: 1 Channel. Pd - Power Dissipation: 140 W. Id - Continuous Drain Current: 161 A. Length: 6.5 mm. Height: 2.3 mm.
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Condition: New Location: Villa Park, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 125 W. Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm. Drain-Source Capacitance (Cd): 1200 pF.
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Condition: New Location: Erfurt, Germany
Transistor:N-MOSFET;unipolar;40V;50A;44W;DPAKFDD8447LN Channel TransistorsSMD Technical specifications Manufacturer: ON SEMICONDUCTOR Transistor type: N-MOSFET Technology: Power® Polarization: unipolar Drain-Source Voltage: 40V Drain current: 50A Power dissipation: 44W Housing: DPAK Gate-Source voltage: ±20V Resistance in line state: 14mΩ Mounting: SMD Gate- Charge: 52nC Packing Type: B Packing Type: Roll Duct Type: Strong.
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Condition: New Location: Denver, United States
10pcs IRFZ24N. We do not accept P.O. Boxes. Add to Favorite. We're happy to help. Advanced Process Technology.
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Condition: New Location: Dayton, United States
(This is for 2) pcs of the IRF9530 Transistor. TO-220 P Channel MOSFET Transistor. Consolidated Electronics was created in February of 1979. used in AF and Switching applications.
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Condition: New Location: Saint Helens, United States
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Condition: New Location: Denver, United States
The FQP13N10 DMOS advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand a high energy pulse in theavalanche and commutation modes.
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Condition: New Location: , Canada
Fix and forget the problem with RMS Lab's advanced technologies! With increased demand for an alternative solution to subpar OEM parts and unproven manufacturer recalls, we had our RMS Labs?. engineers tackle the problem.
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Condition: New Location: Villa Park, United States
Type of Transistor: MOSFET. device design that HEXFET Power MOSFETs are well. applications where higher power levels preclude the use of. Maximum Power Dissipation (Pd): 300 W. - Advanced Process Technology.
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Condition: New Location: Addison, United States
Manufacturer P/N: IRF1407. 5pcs IRF1407 IRF 1407 Power MOSFET TO-220AB "IR" N CHANNEL. Vdss is 75V and continuous drain current is 130A @ 25C. Type of Transistor: MOSFET. N channel Power MOSFET. Maximum Power Dissipation (Pd): 330 W.
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Condition: New Location: Cranbury, United States
Product Category: MOSFET. Qty: 10pcs. Pd - Power Dissipation: 130 W. Number of Channels: 1 Channel. Rds On - Drain-Source Resistance: 14 mOhms. Length: 10.54 mm. Height: 8.77 mm.
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Condition: New – Open box Location: North Hills, United States
They were used on Electronic Visual Aids, but can be used on any project.
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Condition: New Location: , China
For example, as the price, we should write on the waybill invoice, or how to describe the goods, and so on.
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Condition: New Location: Mission Viejo, United States
IPW60R165CP Infineon N-Ch MOSFET 600V 21A 165mOhm 192W TO-247. Manufacturer Infineon. Since Sofitrek is not an authorized distributor, the original manufacturer's warranties are explicitly not applicable to the products sold.
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Condition: New Location: Saint Helens, United States
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Condition: New – Open box Location: Dover, United States
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Condition: New Location: Dayton, United States
(This is for 2) pcs of the IRF9540 MOSFET Transistors. TO-220 P Channel MOSFET Transistors. Consolidated Electronics was created in February of 1979.
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Condition: New Location: Villa Park, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 150 W. Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm. Drain-Source Capacitance (Cd): 185 pF.
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Condition: New Location: Addison, United States
Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 200 W. Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm.
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Condition: New Location: Saint Louis, United States
SI2300 N-Channel MOSFET. An excellent high current SOT23 surface mount MOSFET. The on-state resistance is also very low enabling high pulsed currents and temperature stability. This MOSFET can also replace and outperform others when repairing a device.
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Condition: New Location: Pelham, United States
Type of Transistor: MOSFET. Lot of (5PCS). Maximum Power Dissipation (Pd): 140 W. Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm.
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Condition: New Location: Myerstown, United States
Manufacturer Part No: IRF510N. Transistor Type:MOSFET. Transistor Polarity:N Channel. LED power supplies. Multiple transistors. Our Policy. and much more. PCB repair.
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Condition: New Location: Bellflower, United States
For sale are 5pcs of IRF640 power Mosfets N- cahnnel used in power inverter circuits and many other applications. .. Fast shipping from southern California
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Condition: New Location: , China
Module, crystal oscillator, relay and all kinds of electronic.
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Condition: New Location: Bellflower, United States
Fast shipping from southern California
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Condition: New Location: Lathrop, United States
10pcs IRF1404. Ultra Low On-Resistance.
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Condition: New Location: Dayton, United States
(This is for 2) pcs of the IRF520 MOSFET Transistors. TO-220 N Channel MOSFET Transistors. Consolidated Electronics was created in February of 1979. this is the real deal.
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Condition: New Location: Philadelphia, United States
Package include: 10x Transistors Compatible models: FQP30N06L 60V N-Channel MOSFET TO-220 Brand Unbranded/Generic MPN FQP30N06L UPC Does not apply MPN FQP30N06L UPC Does not apply.
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Condition: New Location: , United States
N-Channel 8A, 160V TO-3 Power MOSFET. New Quantity-2.
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Condition: New Location: Clinton, United States
Transistor Polarity:??.
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Condition: New Location: Clayton, United States
If there is a part that is not listed, for example- faceplate, knob etc. We can not list all parts available. If there is a part that you need that is not listed, for example, faceplate, CD or DVD Deck, knob, etc.
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Condition: New Location: San Francisco, United States
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Condition: New Location: Cleveland, United States
2PCS Genuine IRFP240 MOSFET Transistor 12A 200V TO-247 Power USA (Pair)
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Condition: New Location: San Jose, United States
5PCS FDPF18N50 18N50 MOSFET, 500V N-CH MOSFET TO-220F.
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Condition: New Location: Adairsville, United States
This item is for a lot of 5 pieces of a new genuine Infineon/International Rectifier IRF520 MOSFET transistors. Don't be fooled with under-performing fake look-a-likes! Compare the numbering on these with the fakes and you will see the difference.
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Condition: New Location: Mission Viejo, United States
STP60NF06 ST N-Ch MOSFET 60V 60A 16mOhm 110W TO-220. These products may originate from older batches, series, or have earlier date codes compared to those currently provided by the original manufacturers or their authorized dealers.
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Condition: New Location: Granbury, United States
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Condition: New Location: Addison, United States
Type of Transistor: MOSFET. Maximum Drain Current 'Id': 65 A. Maximum Power Dissipation (Pd): 190 W.
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Condition: New Location: Villa Park, United States
10 x IRF510N Power MOSFET Transistor N-Channel. Transistor Type:MOSFET. Transistor Polarity:N Channel. Ease of paralleling. Repetitive avalanche rated.
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